Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489780 | Journal of Crystal Growth | 2017 | 7 Pages |
Abstract
In this work, the near-infrared photoluminescence (PL) of InSb/GaSb QD structures grown on GaSb substrate (2° off (100)) using atmospheric pressure Metalorganic Vapor Phase Epitaxy is investigated. The structures are analyzed before capping and after capping using scanning probe microscopy and high resolution transmission electron microscopy (HRTEM), respectively. At 10 K, with an excitation power of 2 mW, a PL peak at â¼ 732 meV is observed. Upon an increase in laser power to 120 mW, a blue shift of â¼ 8 meV is noticed. This emission typically persists up to 60-70 K, after which it becomes weak. An SPM analysis of the size distribution of uncapped dots reveals a mono-modal distribution with an average density of â¼ 5Ã1010 cmâ2. However, a HRTEM investigation of the capped dots reveals the formation of an InGaSb quantum well-like structure, â¼ 10 nm thick, which gives rise to the PL signal mentioned above.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
C.C. Ahia, N. Tile, Z.N. Urgessa, J.R. Botha, J.H. Neethling,