Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489829 | Journal of Crystal Growth | 2016 | 6 Pages |
Abstract
Study on the sources of stress in HVPE-GaN layer crystallized on 1-in. ammonothermally grown GaN seed is presented in this paper. Characterization by means of X-ray diffraction and transmission electron microscopy is performed. HVPE-GaN samples of high quality and those with visible quality deterioration are investigated on c-plane and m-plane cross-sections. Special attention is paid to HVPE material growing in semi-polar and non-polar directions on the edges of the seed and the growing layer. It is shown that this material generates significant stress leading to a structural deterioration of HVPE-GaN growing in the c-direction.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
J.Z. Domagala, J. Smalc-Koziorowska, M. Iwinska, T. Sochacki, M. Amilusik, B. Lucznik, M. Fijalkowski, G. Kamler, I. Grzegory, R. Kucharski, M. Zajac, M. Bockowski,