Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489838 | Journal of Crystal Growth | 2016 | 13 Pages |
Abstract
We investigated the C concentration in GaN as a function of the V/III ratio and growth rate for a p-n junction diode structure on a bulk GaN substrate by metalorganic chemical vapor deposition (MOCVD). The C concentration was independent of the growth rate for growth at atmospheric pressure. Moreover, the C concentration in GaN was 3.3Ã1015 cmâ3 at a V/III ratio of 5000 with a growth rate of 2.3 µm/h and 4Ã1015 cmâ3 at a V/III ratio of 3700 with a growth rate of 4.7 µm/h. Both of the major and minor carrier concentrations in the drift layers of a p-n junction structure were optimized at the reasonable growth rate in terms of the short growth time. The C impurity concentration was well controlled at a concentration on the order of 1015 cmâ3.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Guanxi Piao, Kazutada Ikenaga, Yoshiki Yano, Hiroki Tokunaga, Akira Mishima, Yuzaburo Ban, Toshiya Tabuchi, Koh Matsumoto,