Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489852 | Journal of Crystal Growth | 2016 | 22 Pages |
Abstract
Nanopipes associated to screw dislocations are studied by transmission electron microscopy in Si-doped GaN films grown on silicon substrates. The observations revealed that dislocations had an empty core and that an AlN interlayer is suited to block their propagation. The termination mechanism is discussed in terms of strain and kinetic growth factors, which may affect the creation and propagation of nanopipes. According to the observations, it is proposed that either step pinning or lateral overgrowth occurring at the proximity of the defect assists in capping the nanopipe.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
O. Contreras, F. Ruiz-Zepeda, M. Avalos-Borja, A. Dadgar, A. Krost,