Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489857 | Journal of Crystal Growth | 2016 | 20 Pages |
Abstract
We demonstrate n-type doping of GaN with Ge by MOCVD at high concentrations that are necessary to fully screen the polarization fields in c-plane InGaN/GaN quantum wells. Hall measurements show linear Ge incorporation with dopant flow rate and carrier concentrations exceeding 1Ã1020Â cmâ3. GaN:Ge layers exhibit excellent electron mobility, high conductivity, and contact resistivity comparable to the best unannealed contacts to Si-doped GaN. However, the surface morphology begins to degrade with Ge concentrations above 1Ã1019Â cmâ3, resulting in severe step bunching and a network of plateaus and trenches, even in layers as thin as 10Â nm.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
N.G. Young, R.M. Farrell, M. Iza, S. Nakamura, S.P. DenBaars, C. Weisbuch, J.S. Speck,