Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489889 | Journal of Crystal Growth | 2016 | 4 Pages |
Abstract
We recently reported on the formation of overlapping rhombus-shaped stacking faults from scratches left over by the chemical mechanical polishing during high temperature annealing of PVT-grown 4H-SiC wafer. These stacking faults are restricted to regions with high N-doped areas of the wafer. The type of these stacking faults were determined to be Shockley stacking faults by analyzing the behavior of their area contrast using synchrotron white beam X-ray topography studies. A model has been proposed to explain the formation mechanism of the rhombus shaped stacking faults based on double Shockley fault nucleation and propagation. In this paper, we have experimentally verified this model by characterizing the configuration of the bounding partials of the stacking faults on both surfaces using synchrotron topography in back reflection geometry. As predicted by the model, on both the Si and C faces, the leading partials bounding the rhombus-shaped stacking faults are 30° Si-core and the trailing partials are 30° C-core. Using high resolution transmission electron microscopy, we have verified that the enclosed stacking fault is a double Shockley type.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yu Yang, Jianqiu Guo, Ouloide Goue, Balaji Raghothamachar, Michael Dudley, Gil Chung, Edward Sanchez, Jeff Quast, Ian Manning, Darren Hansen,