Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489903 | Journal of Crystal Growth | 2016 | 20 Pages |
Abstract
Growth and quality of single crystals are unusually sensitive to the thermal distribution. In the appropriate thermal field ferroelectric single crystal 23Pb(In1/2Nb1/2)O3-44Pb(Mg1/3Nb2/3)O3-33PbTiO3 (abbr. PIN-PMN-PT, or PIMNT), with 105 mm in diameter and 150 mm in length, is successfully grown by the modified Bridgman technique. This as-grown crystal shows excellent properties (k33~0.92, d33~2200 pC/N, Ec~5.7 kV/cm, Tc~185 °C, Tr/t~120 °C; kt~0.60) near morphotropic phase boundary. In order to suppress the compositional segregation and improve the crystal quality, the controllable orientation growth for specific applications is performed successfully using the same oriented seed. For magnetoelectric applications as-grown <110> oriented PIN-PMN-PT crystal demonstrates its high homogeneity (Îε<±6%, Îtanδ<±14%, ÎTr/t<±3%, ÎTc<±3% and Îkt<±2% in a Φ80 mm transverse wafer). These results of single crystal PIN-PMN-PT will greatly meet demands of its devices and promote its applications in the future.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Xian Wang, Di Lin, Sheng Wang, Jianwei Chen, Haiqing Xu, Xiaobing Li, Xiangyong Zhao, Haosu Luo,