Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5490077 | Journal of Magnetism and Magnetic Materials | 2017 | 22 Pages |
Abstract
Integration of ferrite thin films of CoFe2O4 with silicon was an essential step for the development of magnetic and microwave micro-electro-mechanical system (MEMS) devices. This paper reports about the integration of Zn and Mn co-doped CoFe2O4 (Co0.6Zn0.4Fe1.7Mn0.3O4) thin films on silicon wafer surface. The films were deposited by spin coating technique and subsequently annealed at 600 °C (thickness â¼200 nm) and 700 °C (thickness â¼150 nm). Higher values of in plane remanance ratio (33-35%) compared to out of planes (5-13.5%) ones indicate the in plane orientation of the easy axis of magnetization driven by the shape anisotropy of the thin film structure. Upon rise in annealing temperature, coercivity for longitudinal Kerr hysteresis loop increases from 164 Oe to 227 Oe and that for the transverse hysteresis Kerr loop increases from 244 Oe to 586 Oe.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Arti Gupta, Shankar Dutta, R.P. Tandon,