Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5490185 | Journal of Magnetism and Magnetic Materials | 2017 | 6 Pages |
Abstract
We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular magnetic anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simulations are performed to visualize the domain structure and switching process.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Tanmoy Pramanik, Anupam Roy, Rik Dey, Amritesh Rai, Samaresh Guchhait, Hema C.P. Movva, Cheng-Chih Hsieh, Sanjay K. Banerjee,