Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5490683 | Journal of Magnetism and Magnetic Materials | 2017 | 5 Pages |
Abstract
Sm7.5Y2.5Fe90âxSix (x=0.0, 2.5, 5.0, 7.5 and 10) alloys have been prepared by arc melting method and equilibrium disordered Th2Zn17-type phases, (Sm,Y)2ây(Fe,Si)17+2y, with relative lower rare-earth content than the ordered Th2Zn17-type phase, have been obtained. Compared to the ordered Th2Zn17-type structure, the X-ray diffraction (XRD) intensity of the superstructure lines of the (Sm,Y)2ây(Fe,Si)17+2y decreases with the increase of the Si content and becomes zero for x=10. According to the refinement with the disordered Th2Zn17-type structure, the occupation rates of the R atoms at (3a) and (6c) sites tend to reach the same value with the increase of the Si content, and the lattice parameter a decreases while the lattice parameter c increases, leading to an increase of c/a. It was found that the atomic ratio of Fe(Si)/Sm(Y) in the disordered Th2Zn17-type structure increases with the increase of Si content and reaches a maximum value of 9.07 with x=10. The XRD diagrams of the magnetic aligned samples indicate that the easy magnetization direction (EMD) of the (Sm,Y)2ây(Fe,Si)17+2y is in the a-b plane, and the change of the EMD in a-b plane has also been observed due to the Si preferred site occupation. The remanence ratios along the easy direction are higher than that along hard direction; however, all the remanence ratios are less than 0.5. The magnetocrystalline anisotropy constant K increases first and then decreases with increasing the Si content. The Curie temperature of Sm7.5Y2.5Fe90âxSix alloys increases by about 65Â K per Si. The saturation magnetization increases first and then decreases with a maximum of 135.5Â emu/g observed for x=2.5 at room temperature.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
W.Y. Yang, H. Zhao, Y.F. Lai, H.L. Du, S.Q. Liu, C.S. Wang, J.Z. Han, Y.C. Yang, X. Yu, Z.Q. Qi, J.B. Yang,