The effects of strain on DC transverse and spin-valley Hall conductivity of ferromagnetic MoS2 and silicene

In this paper, we have investigated the effects of strain on DC transverse and spin-valley Hall conductivity (SHC-VHC) of two-dimensional buckled materials ferromagnetic graphene's analog, MoS2 and silicene due to their spin-orbit coupling. The Kubo formalism has been used to investigate the dynamics of carriers under strain along the armchair (AC) direction of systems in the context of the Kane-Mele Hamiltonian and the Dirac cone approximation. The effective mass of carriers increases with strain and this leads to the reduction of their transport. We have found that SHC-VHC changes symmetrically with respect to a critical strain around 13% and 45% for MoS2 and silicene, respectively. Furthermore, the reflection symmetry of silicene has been broken with electric field and a phase transition to topological insulator for strained ferromagnetic silicene has been seen.