Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5491747 | Physica B: Condensed Matter | 2017 | 28 Pages |
Abstract
This work aims to calculate the energy spectrum of semiconductor In1âxGaxAs/GaAs Quantum Ring (QR) using a three-dimensional model. The latter is modeled by a truncated torus residing on a thin In1âxWLGaxWLAs wetting layer (WL). The main novelty of this work is to calculate electron and hole ground state energy using a variational method. The lattice-mismatch strain effect and the charge carrier confinement profile were considered in the calculation. For electron, the energy dependence of the effective mass was taken into account in solving the Schrödinger equation using the single band effective mass approximation. Moreover, variational estimate of the excitonic binding energy and the oscillator strength as a function of the QR radial width and Ga mole content were reported.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Afef Ben Mansour, Mohamed Souhail Kehili, Adnen Melliti, Mohamed Ali Maaref,