Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5491778 | Physica B: Condensed Matter | 2017 | 4 Pages |
Abstract
Optical gain characteristics of a-plane (11 2¯ 0) AlGaN/GaN quantum well (QW) lasers grown on a GaN buffer with strain anisotropy using a strain-engineered MgZnO layer were investigated using the multiband effective mass theory. The calculated transition energies for QW structures grown on MgZnO layer are in good agreement with experimental results. The optical gain of the QW structure grown on the MgZnO substrate is dominated by the zâ²-polarization because the dominant states constituting the topmost valence subband for the QW structure changes from |Yâ²>âto|Zâ²>-like and carriers occupy higher states above kâ¥=0 at a higher carrier density. On the other hand, the optical gain of the QW structure grown on conventional GaN buffer is dominated by both yâ²- and zâ²-polarizations. Thus, the optical polarization characteristics of a-plane AlGaN/GaN QW lasers can be engineered by using MgZnO substrate.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Seoung-Hwan Park,