Article ID Journal Published Year Pages File Type
5491784 Physica B: Condensed Matter 2017 4 Pages PDF
Abstract
(110)SrTiO3:Nb (NSTO)/ZnO heterojunctions were fabricated by magnetron sputtering. The NSTO/ZnO heterojunctions exhibit a typical rectification characteristic, and two attendant behaviors of bipolar resistive switching and negative differential resistance appear after applying a magnetic field. The ideality factor (n) increases from 3.0 to 8.8 and the density of interface state Nss increases from 8.4×1013 to 1.8×1014 eV−1·cm−2 after applying a magnetic field. The variance of interface state density can be used to qualitatively understand the above results.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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