Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5491784 | Physica B: Condensed Matter | 2017 | 4 Pages |
Abstract
(110)SrTiO3:Nb (NSTO)/ZnO heterojunctions were fabricated by magnetron sputtering. The NSTO/ZnO heterojunctions exhibit a typical rectification characteristic, and two attendant behaviors of bipolar resistive switching and negative differential resistance appear after applying a magnetic field. The ideality factor (n) increases from 3.0 to 8.8 and the density of interface state Nss increases from 8.4Ã1013 to 1.8Ã1014 eVâ1·cmâ2 after applying a magnetic field. The variance of interface state density can be used to qualitatively understand the above results.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yinglong Fang, Jiachen Li, Yonghai Chen, Weifeng Zhang, Caihong Jia,