Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5491954 | Physica B: Condensed Matter | 2017 | 5 Pages |
Abstract
The electronic properties, such as the layer-dependent behavior of the band structure, band gap, work function alignment and dielectric properties of the few-layer GeSe are systematically investigated via gradient-corrected density functional theory computations, inspired by the experimentally observation of two-dimension materials such as graphene, phosphorene, MoS2 and BN. The results indicate that the few-layer GeSe presents a robust direct band gap, which decreases with increasing the thickness from bilayer (1.15Â eV) to six-layer (1.00Â eV) around the X point. Furthermore, the work function increases rapidly from monolayer (4.44Â eV) to trilayer (4.95Â eV). The robust direct band gap characteristics and the layer-dependent band gap suggest that the few-layer GeSe is a promising material for efficient solar energy harvesting applications. The layer dependence of the GeSe work function offers a practical route to tune the Schottky barrier in GeSe based electronic devices. Our results provide new insights on utilizing the layer-controlled band gap of the atomic layers of GeSe.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Xiufeng Song, Wenhan Zhou, Xuhai Liu, Yu Gu, Shengli Zhang,