Article ID Journal Published Year Pages File Type
5492078 Physica B: Condensed Matter 2017 8 Pages PDF
Abstract
The effect of lattice damage generated by the H2+-implantation on exfoliation efficiency in 6H-SiC wafers is investigated. <0001> 6H-SiC wafers were implanted with 134 keV H2+ ions to ion fluences from 1.5×1016 to 5×1016 H2+ cm−2 and subsequently annealed at temperatures from 973 K to 1373 K. The samples were studied by a combination of optical microscopy and transmission electron microscopy. Only after 1373 K annealing for 15 min, blisters and exfoliation occur on the H2+-implanted sample surface. With increasing the implantation fluences from 1.5×1016 to 3.75×1016 H2+ cm−2, the exfoliation mean size decreases, while the exfoliation density increases. For the highest fluence of 5×1016 H2+ cm−2, seldom exfoliations occur on the sample surface. Microstructure analysis shows that exfoliation efficiency is largely controlled by the H2+-implantation-induced lattice damage. The depth of the microcrack is related to the implantation fluence. The effect of implantation fluence on dislocation loops, platelet nucleation and growth is investigated.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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