Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5492078 | Physica B: Condensed Matter | 2017 | 8 Pages |
Abstract
The effect of lattice damage generated by the H2+-implantation on exfoliation efficiency in 6H-SiC wafers is investigated. <0001> 6H-SiC wafers were implanted with 134Â keVÂ H2+ ions to ion fluences from 1.5Ã1016 to 5Ã1016 H2+ cmâ2 and subsequently annealed at temperatures from 973Â K to 1373Â K. The samples were studied by a combination of optical microscopy and transmission electron microscopy. Only after 1373Â K annealing for 15Â min, blisters and exfoliation occur on the H2+-implanted sample surface. With increasing the implantation fluences from 1.5Ã1016 to 3.75Ã1016 H2+ cmâ2, the exfoliation mean size decreases, while the exfoliation density increases. For the highest fluence of 5Ã1016 H2+ cmâ2, seldom exfoliations occur on the sample surface. Microstructure analysis shows that exfoliation efficiency is largely controlled by the H2+-implantation-induced lattice damage. The depth of the microcrack is related to the implantation fluence. The effect of implantation fluence on dislocation loops, platelet nucleation and growth is investigated.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
L. Zhang, B.S. Li,