Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5492228 | Physica B: Condensed Matter | 2016 | 24 Pages |
Abstract
Ga-doped zinc oxide (GZO) thin films were deposited by closed field unbalanced DC coupled RF magnetron sputtering system at room temperature. The RF sputtering power ratio was adjusted from 0% to 100%. The crystal structure, surface morphology, transmittance and electrical resistivity of GZO films mainly influenced by RF sputtering power ratio were investigated by X-ray diffractometer, scanning electronic microscope, ultraviolet-visible spectrophotometer and Hall effect measurement. The research results indicate that the increasing RF power ratio can effectively reduce the discharge voltage of system and increase the ionizing rate of particles. Meanwhile, the higher RF power ratio can increase the carrier mobility in GZO thin film and improve the optical and electrical properties of GZO thin film significantly. Within the optimal discharge voltage window, the film deposits at 80% RF power ratio exhibits the lowest resistivity of 2.6Ã10â4 Ω cm. We obtain the GZO film with the best average optical transmittance is approximately 84% in the visible wavelength. With the increasing RF power ratio, the densification of GZO film is enhanced. The densification of GZO film is decrease when the RF power ratio is 100%.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Shou Peng, Tingting Yao, Yong Yang, Kuanxiang Zhang, Jiwen Jiang, Kewu Jin, Gang Li, Xin Cao, Genbao Xu, Yun Wang,