| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5492572 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2017 | 21 Pages |
Abstract
This article presents a new bulk radiation damage model for p-type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8Ã10151MeVneqâcm2.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Ã
. Folkestad, K. Akiba, M. van Beuzekom, E. Buchanan, P. Collins, E. Dall'Occo, A. Di Canto, T. Evans, V. Franco Lima, J. GarcÃa Pardiñas, H. Schindler, M. Vicente, M. Vieites Diaz, M. Williams,