Surface effects in segmented silicon sensors

The voltage stability, charge-collection properties and dark current of segmented silicon sensors are influenced by the charge and potential distributions on the sensor surface, the charge distribution in the oxide and passivation layers, and by Si-SiO2 interface states. To better understand these phenomena, measurements on test structures and sensors before and after X-ray irradiation, and TCAD simulations including surface and interface effects are performed at the Hamburg Detector Lab. The main results of these investigations and ongoing studies are presented.