Memory matrix theory of the dc resistivity of a disordered antiferromagnetic metal with an effective composite operator

We perform the calculation of the dc resistivity as a function of temperature of the “strange-metal” state that emerges in the vicinity of a spin-density-wave phase transition in the presence of weak disorder. This scenario is relevant to the phenomenology of many important correlated materials, such as, e.g., the pnictides, the heavy-fermion compounds and the cuprates. To accomplish this task, we implement the memory-matrix approach that allows the calculation of the transport coefficients of the model beyond the quasiparticle paradigm. Our computation is also inspired by the ϵ=3−d expansion in a hot-spot model embedded in d-space dimensions recently put forth by Sur and Lee (2015), in which they find a new low-energy non-Fermi liquid fixed point that is perturbatively accessible near three dimensions. As a consequence, we are able to establish here the temperature and doping dependence of the electrical resistivity at intermediate temperatures of a two-dimensional disordered antiferromagnetic metallic model with a composite operator that couples the order-parameter fluctuations to the entire Fermi surface. We argue that our present theory provides a good basis in order to unify the experimental transport data, e.g., in the cuprates and the pnictide superconductors, within a wide range of doping regimes.