| Article ID | Journal | Published Year | Pages | File Type | 
|---|---|---|---|---|
| 5496373 | Physics Letters A | 2017 | 5 Pages | 
Abstract
												Doping asymmetry is a pervasive issue in wide band gap semiconductors. We demonstrated that γ-CuCl is one of them with an intrinsic p-type semiconductor by first-principles calculations. The valence band maximum of γ-CuCl is dominated by the antibonding state of Cu-3d and Cl-3p, resulting in a high energy position. We further find that Cu vacancy has a relatively low diffusion barrier in addition to its low formation energy, implying that the long-standing n-type conductivity is hard to realize in γ-CuCl even with non-equilibrium approaches.
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											Authors
												Dan Huang, Jin-Peng Xu, Jing-Wen Jiang, Yu-Jun Zhao, Biao-Lin Peng, Wen-Zheng Zhou, Jin Guo, 
											