Article ID Journal Published Year Pages File Type
5496373 Physics Letters A 2017 5 Pages PDF
Abstract
Doping asymmetry is a pervasive issue in wide band gap semiconductors. We demonstrated that γ-CuCl is one of them with an intrinsic p-type semiconductor by first-principles calculations. The valence band maximum of γ-CuCl is dominated by the antibonding state of Cu-3d and Cl-3p, resulting in a high energy position. We further find that Cu vacancy has a relatively low diffusion barrier in addition to its low formation energy, implying that the long-standing n-type conductivity is hard to realize in γ-CuCl even with non-equilibrium approaches.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Physics and Astronomy (General)
Authors
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