Novel T-shaped GaSb/InAsN quantum wire for mid-infrared laser applications

In this work, we investigate GaSb/InAs1−xNx T-shaped quantum wire active region in mid-infrared laser. Multi-band k.p model and variational formalism are applied to find the confinement energies, the band structures, and optical gain. We then present a method of numerical calculation that is suited to any T-shaped quantum wire. By tuning the quantum wire thickness, the TE- and TM-polarized optical gain up to 21×103 cm−1 can be obtained for λ=3.11 μm at room temperature (RT), which is very promising to serve as an alternative active region for high-efficiency mid-infrared laser applications.