Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5496904 | Physics Letters A | 2016 | 9 Pages |
Abstract
Dielectric response of thin-film capacitor structures of Pt/PZT/Pt deposited by the RF magnetron sputtering method and annealed at temperatures of 540-570â°C was investigated. It was found that dielectric properties of these structures depend on the synthesis temperature. Stability of a polarized state is considered on the basis of the analysis of hysteresis loops and capacitance-voltage (C-V) characteristics. The contribution of the domain mechanism in the dielectric response of the capacitor structure comprising a ferroelectric is discussed. Extreme dependences of electrophysical characteristics of PZT films on their synthesis temperature were observed. Correlation of dielectric properties with microstructure of these films is found out.
Related Topics
Physical Sciences and Engineering
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Authors
Mikhail V. Kamenshchikov, Alexander V. Solnyshkin, Igor P. Pronin,