Article ID Journal Published Year Pages File Type
5497273 Physics Procedia 2016 4 Pages PDF
Abstract
The negative-tone E-beam resist ELN-200 was developed for thin film patterning in the 80s of the 20th century, which demonstrated sensitivity to X-rays. In the present work, the application of the resist to the deep X-ray lithography at the VEPP - 3 synchrotron source was studied. The contrast and the sensitivity of the resist to X-rays were found to be 1.7 and approx. 100 J/cm3, respectively. The conditions of both forming of thick resist layers and manufacturing of high-aspect-ratio microstructures using hard X-rays are determined. Microstructures up to 65 um high have been manufactured.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Physics and Astronomy (General)
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