Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5497273 | Physics Procedia | 2016 | 4 Pages |
Abstract
The negative-tone E-beam resist ELN-200 was developed for thin film patterning in the 80s of the 20th century, which demonstrated sensitivity to X-rays. In the present work, the application of the resist to the deep X-ray lithography at the VEPP - 3 synchrotron source was studied. The contrast and the sensitivity of the resist to X-rays were found to be 1.7 and approx. 100Â J/cm3, respectively. The conditions of both forming of thick resist layers and manufacturing of high-aspect-ratio microstructures using hard X-rays are determined. Microstructures up to 65 um high have been manufactured.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Physics and Astronomy (General)
Authors
Vladimir Nazmov, Boris Goldenberg,