| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 57608 | Catalysis Today | 2007 | 8 Pages |
A p-type semiconductor, bulky AgGaS2, was prepared by the conventional solid state reaction and heat-treated at various temperatures under He and H2S gas flow to eliminate vacancies or interstitial defects and to improve the crystallinity. A p–n diode, n-CdS/p-AgGaS2 was fabricated by decorating AgGaS2 surface with nanoparticles of n-type CdS by the hydrothermal treatment. The configuration was confirmed by XRD, UV–vis spectroscopy and TEM. The composite photocatalyst of this new configuration exhibited a high rate of hydrogen production under visible light irradiation (λ ≥ 420 nm) from water containing sulfide and sulfite as hole scavengers. The photocatalytic diode system formed with n- and p-type semiconductors results in efficient charge separation, caused by the rectification of photo-electrons and holes generated upon photo-absorption.
