| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5789232 | Science Bulletin | 2015 | 5 Pages |
Abstract
The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) is investigated as a function of both film thickness and temperature. The Berry curvature-induced intrinsic contribution of 996 Ωâ1 cmâ1 is determined experimentally for the first time. Together with 821 Ωâ1 cmâ1 in Fe(111) and 1100 Ωâ1 cmâ1 in Fe(001) obtained earlier, we show unambiguously the anisotropy of the Berry curvature contribution to the anomalous Hall effect in single-crystal Fe.
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Physical Sciences and Engineering
Chemistry
Chemistry (General)
Authors
Jianli Xu, Lin Wu, Yufan Li, Dai Tian, Kai Zhu, Xinxin Gong, Xiaofeng Jin,