Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5789300 | Science Bulletin | 2015 | 8 Pages |
Abstract
Single-gallium antimonide (GaSb)-nanowire-based photodetectors were fabricated on both rigid SiO2/Si substrate and flexible polyethylene terephthalate (PET) substrates, both of which exhibited high responsivity, fast-response, and long-term stability in photoswitching over a broad spectral range from ultraviolet to near infrared. Besides, the as-fabricated rigid device exhibited high responsivity of 7,350 A/W under illumination of λ = 350 nm and light intensity P = 0.2 mW/cm2, while the flexible device displays higher detectivity of 9.67 à 109 jones at 700 nm than the rigid one and lower noise equivalent power (NEP, NEP700nm*=2.0Ã10â12W/Hz1/2) for the much lower dark current on PET. The high responsivity, broad spectral detection from ultraviolet to near-infrared and long-term stability make GaSb nanowire one of the most important candidates to construct advanced optical sensors or other optoelectronic devices.
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Authors
Tao Luo, Bo Liang, Zhe Liu, Xuming Xie, Zheng Lou, Guozhen Shen,