Article ID Journal Published Year Pages File Type
58523 Catalysis Today 2006 4 Pages PDF
Abstract

Thin films of (Cu/In/Se) were fabricated by evaporated elemental layers of Cu, In and Se on Si (1 0 0) and on glass substrates at TS = 250 °C. Films with phase chalcopyrite structure and strong (1 1 2) preferred orientation were produced. EDX showed uniform compositional properties of the films over a substrate area of 1 cm2. The optical energy band gap of 0.984 eV was obtained and photoluminescence measurements have been carried out in as-deposited polycrystalline Cu/In/Se thin films deposited onto (1 0 0) oriented Si wafers doped with 1015 cm−3 of boron. The PL spectra of CuInSe2 show emission peaks at 0.87 eV ranging from 0.75 to 0.98 eV. The broad emission band is ascribed to donor–acceptor pair (DAP) transition.

Related Topics
Physical Sciences and Engineering Chemical Engineering Catalysis
Authors
, , , , , , , , ,