Article ID Journal Published Year Pages File Type
61225 Journal of Catalysis 2013 6 Pages PDF
Abstract

•Obtained ultrathin MnOx film growth by atomic layer deposition.•Confirmed MnOx films as thin as 1 Å exhibit catalytic behaviors toward water oxidation reactions.•Created MnOx-decorated hematite photoelectrodes.•Identified Fermi-level pinning is the cause for the significant anodic shift in MnOx-decorated hematite photoelectrodes.

To improve semiconductor-based water-splitting performance, one popular approach is to modify the electrode surface with catalysts. The strategy is to increase charge-transfer kinetics and, hence, to reduce overpotential requirements. Relatively underwhelming attention has been paid to how such surface treatments influence the nature of the semiconductor/solution interface so as to reduce photovoltage generated by the photoelectrode. Using atomic layer deposition-grown (ALD) MnOx on hematite (α-Fe2O3) as an example, here, we show that increased charge-transfer kinetics does not necessarily lead to improved overall performance. Compared to bare hematite, MnOx-decorated photoelectrode exhibits significant anodic on-set potential shift. The phenomenon is understood as a substantial reduction in photovoltage generation by hematite, and the origin is identified as Fermi-level pinning effect due to MnOx introduction. This work sheds light on the importance of maintaining band-edge pinning for semiconductor-based photoelectrochemical reactions.

Graphical abstractThe application of catalyst onto semiconductor photoelectrodes may influence not only charge-transfer kinetics but also thermodynamics that determines photovoltage generation. For photoelectrochemical water-splitting purposes, these two effects need to be balanced carefully for a net gain.Figure optionsDownload full-size imageDownload high-quality image (170 K)Download as PowerPoint slide

Related Topics
Physical Sciences and Engineering Chemical Engineering Catalysis
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