Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
614500 | Tribology International | 2015 | 21 Pages |
Abstract
Towards sapphire and SiC wafer, clear and regular atomic step morphology could be observed all-over the surface via AFM. However, the variations of atomic step widths and step directions are different on the whole of different wafer surfaces: that on sapphire wafer are uniform, while that on SiC wafer are distinct. The effects of atomic step width on removal rate are studied. Removal model of super-hard wafer to realize atomically ultra-smooth surface is proposed. The variations of atomic step morphology toward different defects on sapphire and SiC wafers surface are analyzed, and the formation mechanism is discussed.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Colloid and Surface Chemistry
Authors
Yan Zhou, Guoshun Pan, Xiaolei Shi, Suman Zhang, Hua Gong, Guihai Luo,