| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 615392 | Tribology International | 2012 | 9 Pages |
Abstract
⺠Friction and wear of polished Si(1 1 1) are strongly reduced compared to Si(1 0 0) ones. ⺠This crystallography-induced anisotropy (CA) is only observed in multi-asperity contact. ⺠CA does not appear in FFM: a minimum density of atoms in interaction is necessary. ⺠CA is controlled by both surface energy and in-plane strength of wafers. ⺠CA depends on the roughness of wafers which controls the seizure occurrence.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Colloid and Surface Chemistry
Authors
Philippe Stempflé, Jamal Takadoum,