Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
618463 | Wear | 2011 | 9 Pages |
Abstract
ⶠThis paper had established a well model in CMP process for silicon oxide film. The geometry of the concentric grooves pad was discussed, and the numerical data of removal rate were well confirmed with experiments obtained from a commercial device. The removed thickness of silicon oxide films increased with decreasing grooving width and depth of grooves. In the presented study, the optimal concentric pad for silicon oxide polishing had a grooving width is 1 mm, a depth is 1.2 mm, and a pitch is 4 mm, for a removal rate is 3250 A/min and non-uniformity is under 5%.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Colloid and Surface Chemistry
Authors
Chin-Chung Wei, Jeng-Haur Horng, An-Chen Lee, Jen-Fin Lin,