Analyses and experimental confirmation of removal performance of silicon oxide film in the chemical-mechanical polishing (CMP) process with pattern geometry of concentric groove pads

▶ This paper had established a well model in CMP process for silicon oxide film. The geometry of the concentric grooves pad was discussed, and the numerical data of removal rate were well confirmed with experiments obtained from a commercial device. The removed thickness of silicon oxide films increased with decreasing grooving width and depth of grooves. In the presented study, the optimal concentric pad for silicon oxide polishing had a grooving width is 1 mm, a depth is 1.2 mm, and a pitch is 4 mm, for a removal rate is 3250 A/min and non-uniformity is under 5%.