Atomic layer deposition and high-resolution electron microscopy characterization of nickel nanoparticles for catalyst applications

•Ni nano particles were deposited using atomic layer deposition technique on Si wafers and ceramic porous substrates.•We were able to deposit nanoparticles uniformly in the pores.•After several redox cycles, the Ni nanoparticles are still not agglomerated.•Ni nano particles were deposited using atomic layer deposition technique on Si wafers and ceramic porous substrates.•We were able to deposit nanoparticles uniformly in the pores.•After several redox cycles, the Ni nanoparticles are still not agglomerated.

Ni nanoparticles (diameter < 10 nm) are deposited on Si and ceramic substrates of porous lanthanum-substituted strontium titanate/yttrium-stabilized zirconia (LST/YSZ) composites by a two-step process. First, NiO films are produced by atomic layer deposition at 200 °C using bis(methylcyclopentadienyl)nickel(II) (Ni(MeCp)2) and H2O as precursors. In the second step, the NiO films are reduced in H2 atmosphere at 400-800 °C. The size of the resulting Ni nanoparticles is controlled by the temperature. The largest particles with a diameter of about 7 nm are obtained at 800 °C. NiO film and Ni nanoparticles deposited on Si substrates are characterized by high-resolution electron microscopy. It was found that the Ni(MeCp)2 precursor reacts with the substrate, leading to the formation of NiSi2 precipitates beneath the surface of the Si wafer and amorphization of the surrounding area, resulting in a 10 nm thick top layer of the Si wafer. After reductive annealing, NiSi2 precipitates are preserved but Si recrystallizes and the amorphous NiO film transforms into crystalline Ni nanoparticles well distributed on the wafer surface. Process parameters were optimized for Si substrates and transfer of the process to ceramic LST/YSZ substrates is possible in principle. However, a much higher number of ALD cycles (1200 compared to 100 for Si) are necessary to obtain Ni nanoparticles of similar size and the number density of particles is lower than observed for Si substrates.