Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6533781 | Solar Energy Materials and Solar Cells | 2018 | 6 Pages |
Abstract
Sb2Se3 thin films prepared by vapor transport deposition (VTD) method have been treated by post annealing process at 200 °C in vacuum condition for 1â¯h, and the comparative studies between the post annealing treatment (PAT) and without the treatment were carried out. The device efficiency was improved from 4.89% to 5.72% by PAT via the augment of open-circuit voltage and fill factor. Electrical properties from dark J-V and C-V measurements, structural properties from X-ray diffraction, Raman and scanning electron microscope measurements, defect properties from admittance measurements have been compared for the two cell samples. The Sb2Se3 cell sample with PAT was found to own less parallel current pathways, larger built-in voltage, better crystalline and lower defects densities, which may account for the efficiency enhancement.
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Authors
Xiaobo Hu, Jiahua Tao, Shiming Chen, Juanjuan Xue, Guoen Weng, Kaijiang Kaijiang, Zhigao Hu, Jinchun Jiang, Shaoqiang Chen, Ziqiang Zhu, Junhao Chu,