Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6533881 | Solar Energy Materials and Solar Cells | 2018 | 10 Pages |
Abstract
We demonstrate damage-free laser contact openings in silicon oxide layers on polycrystalline silicon on oxide (POLO) passivating contacts. A pulsed UV-laser evaporates the upper part of the polycrystalline silicon layer, lifting off the silicon oxide layer on top. On n-type POLO (and p-type POLO, respectively) samples a saturation current density of 2â¯fAâ¯cmâ2 (6â¯fAâ¯cmâ2) and an implied open-circuit voltage of 733â¯mV (727â¯mV) are achieved with a laser contact opening area fraction of 12.3% (8.7%). The application of this ablation process in an interdigitated back contact solar cell leads to an independently confirmed power conversion efficiency of 26.1%. The excellent contact quality of the laser contact openings is proven by the low series resistance of 0.1â¯Î©â¯cm2 on the solar cell with a contact area of only 3%.
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Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
Felix Haase, Christina Hollemann, Sören Schäfer, Agnes Merkle, Michael Rienäcker, Jan Krügener, Rolf Brendel, Robby Peibst,