Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6533896 | Solar Energy Materials and Solar Cells | 2018 | 5 Pages |
Abstract
In this work, we have demonstrated the extreme radiation hardness of thin film CZTSSe solar cells. Thin film solar cells with CZTSSe, CZTS and CIGS absorber layers were irradiated with 3â¯MeV protons. No degradation in device parameters was observed until a displacement damage dose of 2â¯Ãâ¯1010 MeV/g for CZTS and CZTSSe. CIGS solar cells degraded by 13% at the same dose. For the highest proton dose both the CZTSSe and CZTS degraded by 16% while CIGS suffered from 34% degradation in efficiency. The degradation in efficiency maybe attributed to the reduction in the minority carrier lifetime due to radiation induced lattice defects. Comparisons with previously available literature show that our CZTS technology has superior radiation hardness by about two orders of magnitude compared to existing state of the art Si and GaAs technology.
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Authors
Sethu Saveda Suvanam, Jes Larsen, Nils Ross, Volodymyr Kosyak, Anders Hallén, Charlotte Platzer Björkman,