Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6534118 | Solar Energy Materials and Solar Cells | 2018 | 7 Pages |
Abstract
We compare light induced degradation behaviours in lifetime samples and fully fabricated solar cells made from p-type boron-doped high performance multicrystalline silicon, p-type boron-doped mono-like silicon, n-type phosphorus-doped high performance multicrystalline silicon and p-type boron-doped Czochralski-grown silicon. Our results confirm that the degradation in multicrystalline silicon is triggered by the rapid cooling after the firing process. All cast-grown silicon samples subjected to fast cooling show lifetime reduction after light soaking. Interestingly, the degradation rate in n-type multicrystalline silicon is found to be orders of magnitude slower than in p-type multicrystalline silicon, suggesting that the defect formation mechanism could be affected by the positions of the quasi fermi levels.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
Hang Cheong Sio, Haitao Wang, Quanzhi Wang, Chang Sun, Wei Chen, Hao Jin, Daniel Macdonald,