Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6534158 | Solar Energy Materials and Solar Cells | 2018 | 6 Pages |
Abstract
The light management strategy was applied in III-V solar cells for the maximum utilization of incident photon, namely the selective rear contact was adopted in Ga0.5In0.5P- and GaAs- based solar cells. By etching the rear contact layer (p-GaAs) with photolithography, the distinctive morphological structures consisting of polka-dot patterns were formed, which led to increased reflection and thereby the device performance. Furthermore, the photolithography was controlled to find the optimum contact ratio between the back-surface field and the rear contact. Consequently, the conversion efficiency was increased from ηâ¯=â¯15.5% to 16.3% for the Ga0.5In0.5P-based single-junction solar cell, and from ηâ¯=â¯21.1% to 21.9% for the GaAs-based one, both at the contact ratio of 10%, compared to the cells with full (100%) rear contact ratio. Finally, the selective rear contact was applied to double-junction solar cells (Ga0.5In0.5P- and GaAs- based), exhibiting that this straightforward rear-contact strategy has enabled reaching the efficiency of ηâ¯=â¯30.6% with an anti-reflective coating.
Related Topics
Physical Sciences and Engineering
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Authors
Sun-Tae Hwang, Taehyun Hwang, Sangheon Lee, Bumjin Gil, Byungwoo Park,