Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6534274 | Solar Energy Materials and Solar Cells | 2018 | 7 Pages |
Abstract
We demonstrate the application of a liquid-processed doped silicon precursor as a doping source for the fabrication of interdigitated back contact solar cells. We integrate phosphorus- as well as boron-doped liquid silicon in our n-type interdigitated back contact cell process based on laser-structuring. The cell with the phosphorus back surface field from liquid silicon has an efficiency of 20.9% and the cell with the boron emitter from liquid silicon has an efficiency of 21.9%. We measure saturation current densities of 34 fA cmâ2 on phosphorus-doped layers with a sheet resistance of 108 Ω/sq and 18 fA cmâ2 on boron-doped layers with a sheet resistance of 140 Ω/sq using passivated test samples.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
Felix Haase, Bianca Lim, Agnes Merkle, Thorsten Dullweber, Rolf Brendel, Christian Günther, Michael H. Holthausen, Christoph Mader, Odo Wunnicke, Robby Peibst,