Performance ratio study based on a device simulation of a 2D monolithic interconnected Cu(In,Ga)(Se,S)2 solar cell

An increased P1 width and decreased absorber doping concentration was found to increase the P1 (parallel) shunt resistance due to a reduced horizontal hole current component between the separated back electrodes. A higher shunt resistance enhances the low light behaviour of the solar cell and consequently leads to an improvement of the PR. A decreased Mo(Se,S)2 band gap and doping concentration increases the valence band barrier at the Cu(In,Ga)(Se,S)2/Mo(Se,S)2 interface and we obtained a moderate P1 shunt improvement accompanied by a strong PR enhancement. The increased barrier height enhanced the low light and temperature behaviour of the fill factor finally leading to the PR enhancement.