Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6534555 | Solar Energy Materials and Solar Cells | 2016 | 8 Pages |
Abstract
An increased P1 width and decreased absorber doping concentration was found to increase the P1 (parallel) shunt resistance due to a reduced horizontal hole current component between the separated back electrodes. A higher shunt resistance enhances the low light behaviour of the solar cell and consequently leads to an improvement of the PR. A decreased Mo(Se,S)2 band gap and doping concentration increases the valence band barrier at the Cu(In,Ga)(Se,S)2/Mo(Se,S)2 interface and we obtained a moderate P1 shunt improvement accompanied by a strong PR enhancement. The increased barrier height enhanced the low light and temperature behaviour of the fill factor finally leading to the PR enhancement.
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Physical Sciences and Engineering
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Authors
Christian Schubbert, Patrick Eraerds, Michael Richter, Jürgen Parisi, Ingo Riedel, Thomas Dalibor, Jörg Palm,