Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6534771 | Solar Energy Materials and Solar Cells | 2016 | 9 Pages |
Abstract
We have determined for the first time the device-relevant optical constants of 500 nm and 800 nm-thick Cu2ZnSnS4 absorbers, grown on bare and Mo-coated soda-lime glass (SLG), using spectroscopic ellipsometry (SE). The composition, structure, phase purity and morphology were characterized by X-ray fluorescence, X-ray photoelectron spectroscopy depth profiling, X-ray diffraction, Raman spectroscopy, scanning-electron microscopy and atomic force microscopy. For the SE analysis, carefully determined sample characteristics were utilized to build a multilayer stack optical model, in order to derive the dielectric functions and refractive indices. The SE-derived absorption coefficients from CZTS/SLG samples were compared with those derived from complementary spectrophotometry measurements and found to be in good agreement. The bandgap determined from Tauc plots was Eg=1.57±0.02 eV. The absorption coefficients just above the bandgap were found to be a few 104 cmâ1 and to exceed 105 cmâ1 at energies above ~2.5 eV, which is much higher than previously found. The sub-bandgap k-value was found to be k~0.05 or less, suggesting that a moderate band tail is present. Separate device characterization performed on identical samples allowed us to assign device efficiencies of, respectively, 2.8% and 5.3% to the 500 nm and 800 nm-thick samples featured in this study.
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Authors
Shu-Yi Li, Carl Hägglund, Yi Ren, Jonathan J.S. Scragg, Jes K. Larsen, Christopher Frisk, Katharina Rudisch, Sven Englund, Charlotte Platzer-Björkman,