A new method of preparing highly conductive ultra-thin indium tin oxide for plasmonic-enhanced thin film solar photovoltaic devices

- Plasmonic metallic nanostructures potential in a-Si:H PV light management.
- Work to date shows a marked decrease in conductivity as thickness decreases.
- Here ultra-thin (<40 nm) high quality TCOs fabricated, tested simulated.
- 80 nm ITO films are sputtered, annealed, controlled cyclic wet chemical etch.
- 36 nm thin films with optical enhancement greater than 21% (300-730 nm).