Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6534807 | Solar Energy Materials and Solar Cells | 2016 | 8 Pages |
Abstract
In this work, we investigate correlations between optical and electro-optical properties of GaAsPN/GaP p-i-n solar cells grown by MBE on GaP(001) substrates. A photoluminescence model is first proposed to extract the long range compositional fluctuation energy scale from low temperature photoluminescence spectra of the GaAsPN dilute-nitride material. Solar cells grown with the same nitrogen content at different temperature reveal very different electrical performances. A 4.08Â mA/cm2 short-circuit current density has been obtained, that is an excellent value given the small absorber thickness (300Â nm) and high material bandgap. Comparisons between solar cells photoluminescence, I-V (under AM1.5G illumination) and IQE parameters reveal correlations between their optical and electrical parameters. These results reinforce PL measurements interest for dilute nitride solar cells growth optimization.
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Authors
S. Almosni, P. Rale, C. Cornet, M. Perrin, L. Lombez, A. Létoublon, K. Tavernier, C. Levallois, T. Rohel, N. Bertru, J.F. Guillemoles, O. Durand,