Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6534814 | Solar Energy Materials and Solar Cells | 2016 | 7 Pages |
Abstract
Self-assembled InAs quantum dots (QD) in a GaAs1âxSbx matrix are studied using photoluminescence. Increasing the Sb composition in the GaAs1âxSbx matrix reduces the effective band gap while lowering the valence band offset, resulting in transition from a type-I to type-II band alignment for Sb compositions above 14%. The optimized quantum dots are incorporated in an InAs/GaAs1âxSbx based p-i-n solar cell with a degenerate valence band and therefore optimum intermediate band structure. Temperature dependent external quantum efficiency measurements show an enhancement in the QDs region with increasing temperature.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
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Authors
Y. Cheng, M. Fukuda, V.R. Whiteside, M.C. Debnath, P.J. Vallely, T.D. Mishima, M.B. Santos, K. Hossain, S. Hatch, H.Y. Liu, I.R. Sellers,