Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6535167 | Solar Energy Materials and Solar Cells | 2015 | 7 Pages |
Abstract
A study on the effect of the n-type hydrogenated amorphous silicon (a-Si:H) buffer layers at the I/N interfaces on the overall performance of superstrate (pin-type) hydrogenated microcrystalline silicon (μc-Si:H) single-junction solar cells with wide band gap silicon oxide doped supporting layers is presented. By integrating the n-type a-Si:H materials with proper band gap and thickness values at the I/N interface, the band gap discontinuity between the μc-Si:H intrinsic and n-type nc-SiOx:H layers can be successfully compensated for, thereby improving the carrier collection, reducing the accumulation and recombination of photo-generated carriers near the I/N interface, and improving the overall current and power output of the μc-Si:H cells. Further adoption of an optimized hydrogen profiling technique based on the optimized n-type a-Si:H buffer layers yields an initial conversion efficiency of 10.05% for μc-Si:H single-junction solar cells with a thickness of 2 μm.
Keywords
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
Lisha Bai, Bofei Liu, Qian Huang, Baozhang Li, Dekun Zhang, Jian Sun, Changchun Wei, Xinliang Chen, Guangcai Wang, Ying Zhao, Xiaodan Zhang,