Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6535210 | Solar Energy Materials and Solar Cells | 2015 | 8 Pages |
Abstract
Cu2Sn1âxGexS3 thin-film absorbers are prepared by sulfurization of laminated precursors. The crystal grain size is enhanced under higher growth temperature and/or sulfur pressure. By the XRD and Raman analyses, the crystal alloy is considered to be composed of majority monoclinic phase with minority secondary phase such as Cu2(Sn1âxGex)3S7 throughout the whole Ge/(Ge+Sn) composition range. The optical band gap is observed to be varied between 0.94Â eV and 1.30Â eV in relation with the Ge contents. A photovoltaic conversion efficiency of about 2% is obtained in the sample utilizing Cu2Sn0.6Ge0.4S3 absorber.
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Authors
Myo Than Htay, Takahiro Mandokoro, Hiroaki Seki, Takanori Sakaizawa, Noritaka Momose, Toshinori Taishi, Yoshio Hashimoto, Kentaro Ito,