| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6535395 | Solar Energy Materials and Solar Cells | 2015 | 7 Pages |
Abstract
The Schottky barrier height of Au/p-Si has been modified in-situ by growing InP quantum dots on (100) p-Si by metal organic chemical vapor deposition technique. Under 1-sun AM 1.5, conversion efficiency is found 2.82% higher than that of a control cell where no nano-structuring is used to modify the barrier height.306
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Authors
Nripendra N. Halder, Pranab Biswas, Souvik Kundu, P. Banerji,