Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6535408 | Solar Energy Materials and Solar Cells | 2015 | 7 Pages |
Abstract
The microstructural properties of polycrystalline silicon films obtained by either solid-phase crystallisation (SPC) or laser-induced liquid-phase crystallisation (LPC) were investigated by transmission electron microscopy (TEM). In SPC films, the most common intra-grain defects are dislocations with the density as high as 1E10Â cmâ2 determined from cross-sectional weak-beam dark-field images. The highest dislocation density in LPC film is at least two orders of magnitude lower than the SPC film, 1E8Â cmâ2 and typically it is below 1E6Â cmâ2. The most common defect type in LPC films is twin boundaries and other junctions of different coincidence site lattice (CSL) boundaries. Such differences in the material structural properties result in far superior electrical performance of solar cells made of LPC films, such as mobility up to 400Â cm2Â Vâ1Â sâ1, similar to c-Si wafers, and the higher open-circuit voltage up to 585Â mV.
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Authors
Jialiang Huang, Sergey Varlamov, Jonathon Dore, Jae Sung Yun, Martin A. Green,