Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6535476 | Solar Energy Materials and Solar Cells | 2015 | 5 Pages |
Abstract
The photovoltaic performance of a GaN p-n-n homojunction is characterized using the air-mass (AM) 1.5Â G solar spectrum and a 532-nm green laser. The n-type active region is doped with Si in order to create an intermediate band for sub-bandgap photon absorption. When the doping level in the active region increases from 0 (unintentionally doped) to n=1Ã1018Â cmâ3, the short-circuit current density (Jsc) under illumination by the green laser is noticeably reduced, whereas the Jsc under AM1.5G is significantly enhanced by 90%. The results indicate that the Si-induced intermediate band is partially filled, a key feature favored by intermediate band solar cells.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
Jen-Hsiung Liao, Hsiao-Wei Huang, Lung-Chieh Cheng, Hsueh-Hsing Liu, Jen-Inn Chyi, Dong-Po Cai, Chii-Chang Chen, Kun-Yu Lai,