Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6535636 | Solar Energy Materials and Solar Cells | 2014 | 5 Pages |
Abstract
Porous SiO2 thin films with low reflectance and high transmittance were obtained using reactive high power impulse magnetron sputtering (HIPIMS) at a high working pressure of 6.67Â Pa (50Â mTorr). The average transmittance (450-600Â nm) of the SiO2 thin films was 94.45%. In comparison, SiO2 thin films deposited at a low working pressure of 0.27Â Pa (2Â mTorr) showed an average transmittance of 91.26%. The improvement in the transmittance was attributed to the lower refractive index resulting from the porous structure of the SiO2 thin films. To examine the effect of the anti-reflection SiO2 coating, an a-Si:H solar cell was produced on fluorine-doped tin oxide (FTO) glass. The initial energy conversion efficiency for cells using the anti-reflection, SiO2-coated FTO glass was 11.75%, higher than the 10.75% for the sample using the bare FTO glass. The increase in the short-circuit current density (Jsc) due to the decreased light reflectance was the largest contributor to the increase in the a-Si:H solar cell efficiency.
Related Topics
Physical Sciences and Engineering
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Authors
Kyeonghun Kim, Sungmin Kim, Sehoon An, Geun-Hyuk Lee, Donghwan Kim, Seunghee Han,